MPSA55 & MPSA56 Silicon PNP Transistor General Purpose Amplifier Absolute Maximum Ratings: CollectorEmitter Voltage, V CES MPSA55 .................................................................... 60V MPSA56 .................................................................... 80V Collector Base Voltage, V CBO MPSA55 .................................................................... 60V MPSA56 .................................................................... 80V EmitterBase Voltage, V .......................................................... 4V EBO Continuous Collector Current, I .................................................. 500mA C Total Device Dissipation (T = 25C), P .......................................... 625mW A D Derate Above 25C ....................................................... 5mW/C Total Device Dissipation (T = 25C), P ............................................. 1.5W C D Derate Above 25C ...................................................... 12mW/C Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 83.3C/W qJC Thermal Resistance, Junction toAmbient, R (Note 1) .......................... 200C/W qJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO MPSA55 I = 1.0mA, I = 0, Note 2 60 V C B MPSA56 80 V EmitterBase Breakdown Voltage V I = 100mA, I = 0 4.0 V (BR)EBO E C Collector Cutoff Current I V = 60V, I = 0 0.1 mA CES CE B Collector Cutoff Current I CBO MPSA55 V = 60V, I = 0 0.1 mA CB E MPSA56 V = 80V, I = 0 0.1 mA CB E ON Characteristics DC Current Gain h V = 1.0V, I = 10mA 100 FE CE C V = 1.0V, I = 100mA 100 CE C CollectorEmitter Saturation Voltage V I = 100mA, I = 10mA 0.25 V CE(sat) C B BaseEmitter Saturation Voltage V I = 100mA, V = 1.0V 1.2 V BE(on) C CE Note 1. R is measured with the device soldered into a typical printed circuit board. qJA Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Small Signal Characteristics Current Gain Bandwidth Product f I = 100mA, V = 1V, f = 100Mhz, Note 3 50 MHz t C CE Note 3. f is defined as the frequency at which h extrapolates to unity. t fe .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max