NTE10 Silicon NPN Transistor UHF Low Noise WideBand Amplifier Features: Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) High Power Gain: MAG = 14dB Typ (f = 0.9GHz) High Cutoff Frequency: f = 5GHz Typ T Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70mA C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA B Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 12V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 10 A EBO EB C DC Current Gain h V = 10V, I = 20mA 40 200 FE CE C GainBandwidth Product f V = 10V, I = 20mA 5.0 GHz T CE C Output Capacitance C V = 10V, f = 1MHz 0.8 1.1 pF ob CB Reverse Transfer Capacitance C V = 10V, f = 1MHz 0.5 pF re CB 2 Forward Transfer Gain S V = 10V, I = 20mA, f = 0.9GHz 8 10 dB 21e CE C Maximum Available Power Gain MAG V = 10V, I = 5mA, f = 0.9GHz 14 dB CE C Noise Figure NF V = 10V, I = 5mA, f = 0.9GHz 2.2 4.5 dB CE C.135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min B E C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max