NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer for AM Radio, Medium Speed Switch Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 25V CBO CollectorEmitter Voltage (Note 1), V CEO NTE100 ..................................................................... 24V NTE101 ..................................................................... 25V EmitterBase Voltage, V EBO NTE100 ..................................................................... 12V NTE101 ..................................................................... 25V Collector Current, I C NTE100 .................................................................. 100mA NTE101 .................................................................. 300mA Emitter Current (NTE100 Only), I ................................................. 100mA E Total Device Dissipation, P ..................................................... 150mW D Derate Above 25 C ..................................................... 2.5mW/ C Operating Collector Junction Temperature, T ........................................ +85 C J Storage Temperature Range, T .......................................... 65 to +100C stg Note 1. Punch through voltage. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V (BR)CBO NTE100 I = 0 I = 20A 25 V E C NTE101 I = 100A 25 V C EmitterBase Breakdown Voltage V (BR)EBO NTE100 I = 0 I = 20A 12 V C E NTE101 I = 100A 25 V E Punch Through Voltage V PT NTE100 V = 1V, Note 2 24 V EBfl NTE101 25 V Collector Cutoff Current I CBO NTE100 I = 0 V = 12V 1 5 A E CB V = 12V, T = +80C 40 90 A CB A NTE101 V = 25V 3 6 A CB Note 2. V is determined by measuring the Emitter Base floating potential V . The Collector PT EBfl Base Voltage, V , is increased until V = 1V this value of V = (V + 1V). Care must CB EBfl CB PT be taken not to exceed maximum CollectorBase Voltage specified under maximum ratings.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Emitter Cutoff Current I EBO NTE100 I = 0 V = 2.5V 1 2.5 A C EB NTE101 V = 25V 2 6 A EB Static Forward Current Transfer Ratio h FE NTE100 V = 0.15V, I = 12mA 30 100 CE C V = 0.20V, I = 24mA 24 110 CE C NTE101 V = 1V, I = 10mA 20 100 CE C V = 0.35V, I = 200mA 10 100 CE C BaseEmitter Voltage V BE NTE100 I = 0.4mA, I = 12mA 0.26 0.35 V B C I = 1mA, I = 24mA 0.30 0.40 V B C NTE101 I = 0.5mA, I = 10mA 0.15 0.22 0.40 V B C CollectorEmitter Saturation Voltage V CE(sat) NTE100 I = 0.4mA, I = 12mA 0.08 0.15 V B C I = 1mA, I = 24mA 0.08 0.20 V B C NTE101 I = 0.5mA, I = 10mA 0.07 0.20 V B C SmallSignal Forward Current Transfer Ratio h fe NTE100 V = 6V I = 1mA, f = 1kHz 135 CE C NTE101 V = 5V 105 CE Output Capacitance C ob NTE100 V = 6V I = 0, f = 1MHz 9 20 pF CB E NTE101 V = 5V 14 20 pF CB Switching Characteristics Delay Time NTE100 t I = 10mA, I = 1.3mA, 0.14 s d C B(1) I = 0.7mA, V = 0.8V, B(2) BE(off) NTE101 0.07 s R = 1k L Rise Time t 0.20 s r Storage Time s NTE100 t 0.38 s NTE101 0.70 s Fall Time s NTE100 t 0.19 f NTE101 0.40 s Stored Base Charge Q I = 1mA, I = 10mA 800 1400 pcb sb B(1) C