NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me- diumspeed saturated switching applications. Features: Low CollectorEmitter Saturation Voltage: V = 200mV Max I = 24mA CE(sat) C High EmitterBase Breakdown Voltage: V = 12V Min I = 20 A (BR)EBO E Absolute Maximum Ratings: CollectorBase Voltage, V . 25V CBO CollectorEmitter Voltage, V 24V CES EmitterBase Voltage, V . 12V EBO Continuous Collector Current, I 150mA C Emitter Current, I . 100mA E Total Device Dissipation (T = +25C), P . 150mW A D Derate Above +25 . 2mW/C Total Device Dissipation (T = +25C), P . 300mW C D Derate Above +25 . 4mW/C Operating Junction Temperature Range, T 65 to +100C J Storage Junction Temperature Range, T 65 to +100C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorBase Breakdown Voltage V I = 20 A, I = 0 25 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 20 A, I = 0 12 V (BR)EBO E C PunchThrough Voltage V V = 1V, Note 1 24 V PT EBfl Collector Cutoff Current I V = 12V, I = 0 0.8 5.0 A CBO CB E V = 12V, I = 0, T = +80C 20 90 A CB E A Emitter Cutoff Current I V = 2.5V, I = 0 0.5 2.5 A EBO EB C Note 1. V is determined by measuring the EmitterBase floating potential V , using a voltmeter PT EBfl with 11M minimum input impedance. The CollectorBase Voltage, V , is increased until CB V = 1V this value of V = (V + 1). EBfl CB PTElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 150mV, I = 12mA 30 80 FE CE C V = 200mV, I = 24mA 24 90 CE C CollectorEmitter Saturation Voltage V I = 12mA, I = 0.4mA 0.09 0.15 V CE(sat) C B I = 24mA, I = 1mA 0.09 0.20 V C B BaseEmitter Voltage V I = 12mA, I = 0.4mA 0.27 0.35 V BE C B I = 24mA, I = 1mA 0.30 0.40 V C B SmallSignal Characteristics Alpha Cutoff Frequency f V = 6V, I = 1mA 4 25 MHz hfb CB E Output Capacitance C V = 6V, I = 1mA, f = 1MHz 8 20 pF ob CB E Input Impedance h V = 6V, I = 1mA, f = 1MHz 3.6 k ie CE E 4 Voltage Feedback Ratio h 8 x 10 re SmallSignal Current Gain h 135 fe Output Admittance h 50 mhos oe Switching Characteristics Delay Time t 0.07 s d Rise Time t 0.12 s r Storage Time t 0.20 s s Fall Time t 0.10 s f Stored Base Charge Q 300 1400 pC sb .352 (8.95) Dia Max .320 (98.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Dia Base Emitter Collector 45 .031 (.793)