X-On Electronics has gained recognition as a prominent supplier of NTE104 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE104 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE104 NTE

NTE104 electronic component of NTE
NTE104 NTE
NTE104 Bipolar Transistors - BJT
NTE104  Semiconductors

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See Product Specifications
Part No. NTE104
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: BIPOLAR TRANSISTOR, PNP, -35V, TO-3; Tra; BIPOLAR TRANSISTOR, PNP, -35V, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-35V; Transition Frequency ft:300kHz; Power Dissipation Pd:90W; DC Collector Current:-10A; DC Current Gain hFE:90hFE; No. of Pins:2Pins
Datasheet: NTE104 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 40.9542 ea
Line Total: USD 81.91 
Availability - 11
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
11
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 2
Multiples : 1
2 : USD 40.9542
10 : USD 29.715
25 : USD 29.2556
50 : USD 27.9694
100 : USD 26.4206
250 : USD 25.6988
500 : USD 25.0294

10
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 32.781
2 : USD 30.9876

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
No. Of Pins
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE104 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE104 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO CollectorEmitter Voltage (R = 68 ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V BE CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A E Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Power Dissipation (T +55C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +100C stg Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 0.6A, R = 68 35 V (BR)CER C(peak) BE Collector Cutoff Current I V = 30V, I = 0 1.0 mA CBO CB E DC Current Gain h V = 2V, I = 20mA 50 90 165 FE CE C BaseEmitter Input Voltage V V = 2V, I = 1A 0.38 V BE CE C CollectorEmitter Saturation Voltage V I = 4A, I = 0.4A 0.29 V CE(sat) C B Transition Frequency f V = 2V, I = 1A 300 kHz T CB E.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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