NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: CollectorEmitter Voltage, V 40V CES CollectorBase Voltage, V . 40V CB EmitterBase Voltage, V 20V EB Continuous Base Current, I 4A B Continuous Emitter Current, I . 15A E Total Device Dissipation (T = +25C), P . 150W C D Operating Junction Temperature Range, T 65 to +100C J Thermal Resistance, JunctiontoCase, R . 0.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1A, I = 0, Note 1 25 V (BR)CEO C B V I = 300mA, V = 0, Note 1 40 V (BR)CES C BE Floating Potential V V = 40V, I = 0 1.0 V EBF CB E Collector Cutoff Current I V = 2V, I = 0 0.1 mA CBO CB E V = 40V, I = 0 2.0 8.0 mA CB E V = 40V, I = 0, T = +71C 15 mA CB E B Emitter Cutoff Current I V = 20V, I = 0 1.0 8.0 mA EBO BE C ON Characteristics DC Current Gain h V = 2V, I = 5A 20 40 FE CE C V = 2V, I = 12A 20 CE C CollectorEmitter Saturation Voltage V I = 12A, I = 2A 0.3 V CE(sat) C B BaseEmitter Voltage V V = 2V, I = 5A 0.65 V BE CE C Note 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics CommonEmitter Cutoff Frequency fe V = 6V, I = 5A 10 kHz CE C Switching Characteristics Rise Time t V = 12V, I = 12A, I = 2A 15 s r CE C B Fall Time t V = 6V, I = 0, R = 10 15 s f BE C BE 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .520 (13.2) Max .710 .312 (7.93) (18.03) Max 1032 UNF2A .190 (4.83) Emitter .345 (8.76) Base Collector/Case