NTE107 Silicon NPN Transistor UHF Oscillator for Tuner Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW A T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C stg Lead temperature (During Soldering, 1/16 1/32 from case, 10sec), T . . . . . . . . . . . . . . . +260C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics CollectorBase Breakdown Voltage V I = 100 A 30 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 3mA, Note 1 12 V (BR)CEO CEO EmitterBase Breakdown Voltage V I = 100 A 3 V (BR)EBO E Collector Cutoff Current I V = 15V, I = 0 0.5 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 0.5 A EBO EB C Forward Current Transfer Ratio h V = 10V, I = 8mA 20 75 FE CE C Collector Saturation Voltage V I = 10mA, I = 1mA 0.6 V CE(sat) C B Note 1. Pulse test: Pulse Width = 1 s, Duty Cycle = 1%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Current GainBandwidth Product f I = 5mA, V = 10V, f = 100MHz 700 2100 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 1MHz 0.8 1.5 pF ob CE E Noise Figure NF I = 1mA, V = 6V, f = 60MHz, 4.0 6.5 dB C CB R = 400 G .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max