X-On Electronics has gained recognition as a prominent supplier of NTE121 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE121 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE121 NTE

NTE121 electronic component of NTE
NTE121 NTE
NTE121 Bipolar Transistors - BJT
NTE121  Semiconductors

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See Product Specifications
Part No. NTE121
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, BIPOLAR, PNP, -45V, -10A, TO-3-3
Datasheet: NTE121 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 43.3077 ea
Line Total: USD 43.31 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 43.3077
10 : USD 34.9689
25 : USD 34.4269
50 : USD 32.3699
100 : USD 30.9657
250 : USD 30.1035
500 : USD 29.2782

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 44.2195
25 : USD 39.0625
50 : USD 37.1971

0
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 33.1917
2 : USD 31.3845

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE121 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE121 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 60V CBO CollectorEmitter Voltage (R = 68), V .......................................... 45V BE CER EmitterBase Voltage, V ......................................................... 10V EBO Collector Current, I ................................................................ 10A C Emitter Current, I .................................................................. 10A E Base Current, I .................................................................... 3A B Power Dissipation (T +55C), P ................................................. 90W C D Operating Junction Temperature, T ............................................... +100C J Storage Temperature Range, T .......................................... 55 to +100C stg Note 1. Matched pairs are available upon request (NTE121MP). Matched pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 0.6A, R = 68 45 V (BR)CER C(peak) BE Collector Cutoff Current I V = 30V, I = 0 0.5 mA CBO CB E DC Current Gain h V = 2V, I = 1A 50 90 165 FE CE C BaseEmitter Input Voltage V V = 2V, I = 1A 0.38 V BE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 0.3 V CE(sat) C B Transition Frequency f V = 2V, I = 1A 300 kHz T CB E Rev. 812.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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