X-On Electronics has gained recognition as a prominent supplier of NTE121 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE121 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE121 NTE

NTE121 electronic component of NTE
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Part No.NTE121
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: TRANSISTOR, BIPOLAR, PNP, -45V, -10A, TO-3-3
Datasheet: NTE121 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 44.7276 ea
Line Total: USD 44.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 44.7276
10 : USD 36.1154
25 : USD 35.5556
50 : USD 33.4312
100 : USD 31.981
250 : USD 31.0905
500 : USD 30.2382

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 45.6693
25 : USD 40.3432
50 : USD 38.4166

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 34.2799
2 : USD 32.4135

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE121 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE121 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 60V CBO CollectorEmitter Voltage (R = 68), V .......................................... 45V BE CER EmitterBase Voltage, V ......................................................... 10V EBO Collector Current, I ................................................................ 10A C Emitter Current, I .................................................................. 10A E Base Current, I .................................................................... 3A B Power Dissipation (T +55C), P ................................................. 90W C D Operating Junction Temperature, T ............................................... +100C J Storage Temperature Range, T .......................................... 55 to +100C stg Note 1. Matched pairs are available upon request (NTE121MP). Matched pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 0.6A, R = 68 45 V (BR)CER C(peak) BE Collector Cutoff Current I V = 30V, I = 0 0.5 mA CBO CB E DC Current Gain h V = 2V, I = 1A 50 90 165 FE CE C BaseEmitter Input Voltage V V = 2V, I = 1A 0.38 V BE CE C CollectorEmitter Saturation Voltage V I = 10A, I = 1A 0.3 V CE(sat) C B Transition Frequency f V = 2V, I = 1A 300 kHz T CB E Rev. 812.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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