NTE123 Silicon NPN Transistor General Purpose Audio Amplifier, Switch Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 75 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 60V, I = 0 0.01 A CBO CE E V = 60V, I = 0, T = +150C 10 A CE E A I V = 60V, V = 3V 10 nA CEX CE EB(off) Emitter Cutoff Current I V = 3V, I = 0 10 nA EBO EB C Base Cuttoff Current I V = 60V, V = 3V 20 nA BL CE EB(off)Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 0.1mA, V = 10V 35 FE C CE I = 1mA, V = 10V 50 C CE I = 10mA, V = 10V 75 C CE I = 10mA, V = 10V, T = 55C 35 C CE A I = 150mA, V = 10V 100 300 C CE I = 150mA, V = 1.0V 50 C CE I = 500mA, V = 10V 40 C CE CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.3 V CE(sat) C B I = 500mA, I = 50mA 1.0 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 0.6 1.2 V BE(sat) C B I = 500mA, I = 50mA 2.0 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 20mA, V = 20V, 300 MHz T C CE f = 100MHz, Note 2 Output Capacitance C V = 10V, I = 0, f = 100kHz 8 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 100kHz 25 pF ibo EB C Input Impedance h I = 1mA, V = 10V, f = 1kHz 2.0 8.0 k ie C CE I = 10mA, V = 10V, f = 1kHz 0.25 1.25 k C CE 4 Voltage Feedback Ratio h I = 1mA, V = 10V, f = 1kHz 8 x 10 re C CE 4 I = 10mA, V = 10V, f = 1kHz 4 x 10 C CE SmallSignal Current Gain h I = 1mA, V = 10V, f = 1kHz 50 300 fe C CE I = 10mA, V = 10V, f = 1kHz 75 375 C CE Output Admittance h I = 1mA, V = 10V, f = 1kHz 5.0 35 mhos oe C CE I = 10mA, V = 10V, f = 1kHz 25 200 mhos C CE CollectorBase Time Constant rbC I = 20mA, V = 20V, f = 31.8MHz 150 ps c E CB Noise Figure NF I = 100 A, V = 10V, 4 dB C CE R = 1k , f = 1kHz S Real Part of CommonEmitter Re(h ) I = 20mA, V = 20V, f = 300MHz 60 ie C CE High Frequency Input Impedance Switching Characteristics Delay Time t V = 30V, V = 0.5V, 10 ns q CC BE(off) I = 150mA, I = 15mA C B1 Rise Time t 25 ns r Storage Time t 225 ns V = 30V, I = 150mA, s CC C I = I = 15mA B1 B2 Fall Time t 60 ns f Active Region Time Constant T I = 150mA, V = 30V 2.5 ns A C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. f is defined as the frequency at which h extrapolates to unity. T fe