X-On Electronics has gained recognition as a prominent supplier of NTE123A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE123A Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE123A NTE

NTE123A electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE123A
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 40V 0.8A 3-Pin TO-18
Datasheet: NTE123A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.125 ea
Line Total: USD 53.12 
Availability - 1013
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
1013
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 25
Multiples : 1
25 : USD 2.125
250 : USD 1.675
500 : USD 1.575
1000 : USD 1.525
2500 : USD 1.4625
5000 : USD 1.4125
7500 : USD 1.4
10000 : USD 1.375

1
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 1
Multiples : 1
1 : USD 2.3544
3 : USD 2.1234
10 : USD 1.8778
11 : USD 1.7478
25 : USD 1.69

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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We are delighted to provide the NTE123A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE123A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE123A (NPN) & NTE159M (PNP) Silicon Complementary Transistors General Purpose Description: The NTE123A (NPN) and NTE159M (PNP) are widely used Industry Standard complementary transis- tors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from audio to VHF frequencies. Features: Low Collector Saturation Voltage: 1V (Max) High Current GainBandwidth Product: f = 300MHz (Min) I 20mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorBase Voltage, V CBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V EmitterBase Voltage, V EBO NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I C NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (T = +25C), P 0.4W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C Total Device Dissipation (T = +25C), P C D NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +200C stgElectrical Characteristics: (T = 25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V (BR)CEO NTE123A I = 10mA, I = 0 40 V C B NTE159M 60 V CollectorBase Breakdown Voltage V (BR)CBO NTE123A I = 10 A, I = 0 75 V C E NTE159M 60 V EmitterBase Breakdown Voltage V (BR)EBO NTE123A I = 10 A, I = 0 6 V E C NTE159M 5 V Collector Cutoff Current I CEX NTE123A V = 60V, V = 3V 10 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE BE Collector Cutoff Current I CBO NTE123A V = 60V, I = 0 0.01 A CB E V = 60V, I = 0, T = +150C 10 A CB E A NTE159M V = 50V, I = 0 0.01 A CB E V = 50V, I = 0, T = +150C 10 A CB E A Emitter Cutoff Current (NTE123A Only) I V = 3V, I = 0 10 nA EBO EB C Base Cutoff Current I BL NTE123A V = 60V, V = 3V 20 nA CE EB(off) NTE159M V = 30V, V = 500mV 50 nA CE EB(off) ON Characteristics DC Current Gain h FE NTE123A V = 10V I = 0.1mA, Note 1 35 CE C I = 1mA 50 C I = 10mA, Note 1 75 C I = 10mA, T = 55C 35 C A I = 150mA, Note 1 100 300 C V = 1V, I = 150mA, Note 1 50 CE C V = 10V I = 500mA, Not e 1 40 CE C NTE159M I = 0.1mA 75 C I = 1mA 100 C I = 10mA 100 C I = 150mA, Note 1 100 300 C I = 500mA, Note 1 50 C CollectorEmitter Saturation Voltage V CE(sat) NTE123A I = 150mA, I = 15mA, Note 1 0.3 V C B I = 500mA, I = 50mA, Note 1 1.0 V C B NTE159M I = 150mA, I = 15mA, Note 1 0.4 V C B I = 500mA, I = 50mA, Note 1 1.6 V C B Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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