NTE126 Germanium Mesa Transistor, PNP, for HighSpeed Switching Applications TO18 Type Package Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 15Vdc CE Collector Base Voltage, V ....................................................... 15Vdc CB EmitterBase Voltage, V ....................................................... 2.5Vdc EB Total Device Dissipation (T = +25C), P ......................................... 150mW A D Derate above 25 C ..................................................... 2.0mW/ C Total Device Dissipation (T = +25C), P ......................................... 300mW C D Derate above 25 C ..................................................... 4.0mW/ C Operating Junction Temperature Range, T .................................. 65 to +100C J Storage Junction Temperature Range, T .................................. 65 to +100C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage BV I = 100A, I = 0 15 V CBO C E EmitterBase Breakdown Voltage BV I = 100A, I = 0 2.5 V EBO E C CollectorLatchUp Voltage LV V = 11.5 V 11.5 V CEX CC CollectorEmitter Cutoff Current I V = 15V 100 A CES CE CollectorBase Cutoff Current I V = 6V, I = 0 3.0 A CBO CB E DC Current Gain h I = 10mA, V = 0.3V 40 FE C CE I = 50mA, V = 1V 40 C CE I = 100mA, V = 1V 40 C CE CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.18 V CE(sat) C B I = 50mA, I = 5mA 0.35 C B I = 100mA, I = 10mA 0.60 C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit BaseEmitter Saturation Voltage V I = 10mA, IB = 1mA 0.30 0.50 V BE(sat) C I = 50mA, I = 5mA 0.40 0.75 C B I = 100mA, I = 10mA 0.40 1.00 C B CurrentGainBandwidth Product f I = 20mA, V = 1.0Vdc, f = 100MHz 300 MHz T E CB Output Capacitance C V = 10V, I = 0, f = 1MHz 4.0 pF ob CB E Emitter Transition Capacitance C V = 1V 3.5 pF Te EB TurnOn Time t I = 10mA, I = 5mA, V = 1.25V 50 ns on C B1 BE(off) I = 100mA, I = 5mA, V = 1.25V 50 C B1 BE(off) TurnOff Time t I = 10mA, I = 1mA, I = 0.25mA 85 ns off C B1 B2 I = 100mA, I = 5mA, I = 1.25mA 85 C B1 B2 Total Control Charge Q I = 10mA, I = 1mA 80 pC T C B I = 100mA, I = 5mA 125 C B .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45 .041 (1.05)