NTE127 Germanium PNP Transistor Horizontal Output Amplifier Absolute Maximum Ratings: CollectorBase Voltage, V CBO Peak 320V Continuous 60V EmitterBase Voltage, V 2V EBO Collector Current, I 10A C Base Current, I . +4, 1A B Power Dissipation (T +55C), P . 5W MF D Operating Junction Temperature Range, T (opr) . 65 to +85C J Storage Temperature Range, T . 65 to +85C stg Maximum Thermal Resistance, JunctiontoCase, R 1.5C/W thJC Lead Temperature (During Soldering, 10sec Max), T +230C L Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 0.025A, V = 0 320 V (BR)CES C EB EmitterBase Breakdown Voltage V I = 100mA, I = 0 2 V (BR)EBO E C Collector Cutoff Current I V = 10V, I = 0 200 A CBO CB E CollectorEmitter Saturation Voltage V I = 6A, I = 400mA 1.5 V CE(sat) C B I = 3A, I = 200mA 1.5 V C B DC Current Gain h V = 3V, I = 6A 15 FE CE C BaseEmitter Voltage V I = 6A, I = 400mA 0.8 V BE C B TurnOff Time t + t 1.2 s s f Note 1. This device is for replacement only and NOT intended for new design. Therefore, these specifications are for reference only and strictly for determining the suitability of this device as a replacement in a working circuit..135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case