NTE128P (NPN) & NTE129P (PNP) Silicon Complementary Transistors General Purpose Amp Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: High V Ratings CE Exceptional Power Dissipation Capability Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current , I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Power Dissipation, P TOT T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147C/W thJA Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage BV I = 10mA, I = 0 80 V CEO C B Collector Cutoff Current I V = 80V 100 nA CBO CB Emitter Cutoff Current I V = 4V 100 nA EBO EB DC Current Gain h I = 10mA, V = 2V 100 FE C CE I = 350mA, V = 2V 100 300 C CE CollectorEmitter Saturation Voltage V I = 350mA 0.35 V CE(sat) C Current Gain Bandwidth Product f I = 50mA 50 T C Output Capacitance C V = 10V, I = 0, f = 1MHz 15 pF ob CB E.200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) E B C .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R