X-On Electronics has gained recognition as a prominent supplier of NTE131 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE131 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE131 NTE

NTE131 electronic component of NTE
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See Product Specifications
Part No.NTE131
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 32V 1A 2-Pin(2+Tab) TO-66
Datasheet: NTE131 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.917 ea
Line Total: USD 7.92

Availability - 1
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 8.3738
5 : USD 7.6125
50 : USD 6.0507
100 : USD 5.8669
250 : USD 5.6963
500 : USD 5.3943
1000 : USD 5.2369
2500 : USD 5.1581

1
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 7.917
3 : USD 7.1253
4 : USD 5.46
9 : USD 5.1597

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the NTE131 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE131 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE131 (PNP) & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA B Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +90C stg Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (h ) matched to within FE 10% of each other. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 32V, V = 1V 1 mA CEV CE EB Emitter Cutoff Current I V = 10V, I = 0 1 mA EBO EB C DC Current Gain h V = 0, I = 100mA 35 170 FE1 CB E h V = 0, I = 1A 36 185 FE2 CB E CommonEmitter Cutoff Frequency f V = 2V, I = 100mA 10 15 kHz e CB E BaseEmitter ON Voltage V V = 0, I = 1A 0.4 V BE CB E CollectorEmitter Saturation Voltage V I = 1A, I = 100mA 0.08 V CE(sat) C B.593 (15.08) .290 (7.36) Dia .031 (.792) .295 (7.5) .039 (1.0) Dia .944 (24.0) Base .530 (13.5) .157 (4.0) Dia (2 Places) .315 (8.0) Collector/Case Emitter

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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