X-On Electronics has gained recognition as a prominent supplier of NTE14 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE14 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE14 NTE

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Part No.	NTE14
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: PNP; bipolar; 80V; 700mA; 750mW
Datasheet:	NTE14 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

40: USD 1.7211 ea
Line Total: USD 68.84

Availability - 0

MOQ: 40 Multiples: 1
Pack Size: 1

NTE14 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 25 Dec to Tue. 31 Dec MOQ : 40 Multiples : 1	40 : USD 1.7211 50 : USD 1.3699 100 : USD 0.9924 200 : USD 0.8993 500 : USD 0.8366

0 Ship by Mon. 23 Dec to Wed. 25 Dec MOQ : 1 Multiples : 1	1 : USD 1.8788 3 : USD 1.6949 10 : USD 1.4978 13 : USD 1.235 34 : USD 1.1693

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Type Of Transistor Pnp Pnp
Collector-Emitter Voltage 80 V 80 V
Collector Current 700 mA 700 mA
Power Dissipation 750 mW 750 mW
Current Gain 120 To 270 120 To 270
Frequency 100 MHz 100 MHz

We are delighted to provide the NTE14 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE14 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: High Power Compact FTR Package: P = 750mW C High Breakdown Voltage: V = 80V CEO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Collector Current, I 700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Collector Dissipation, P 750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Junction Temperature, T +135. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +135C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 2mA 80 V (BR)CEO C CollectorBase Breakdown Voltage V I = 50 A 80 V (BR)CBO C EmitterBase Breakdown Voltage V I = 50 A 5 V (BR)EBO E Collector Cutoff Current I V = 50V 0.5 A CBO CB Emitter Cutoff Current I V = 4V 0.5 A EBO EB DC Current Gain h V = 3V, I = 100mA 120 270 FE CE C Collector Saturation Voltage V I = 500mA, I = 50mA 0.2 0.4 V CE(sat) C B Transition Frequency f V = 10V, I = 50mA 100 MHz T CE E Output Capacitance C V = 10V, I = 0, f = 1MHz 14 20 pF ob CB E.102 .280 (7.11) (2.6) .185 (4.7) EC B .100 (2.54) .138 (3.5) .051 (1.29) .022 (0.55)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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