NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: High Power Compact FTR Package: P = 750mW C High Breakdown Voltage: V = 80V CEO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Collector Current, I 700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Collector Dissipation, P 750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Junction Temperature, T +135. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +135C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 2mA 80 V (BR)CEO C CollectorBase Breakdown Voltage V I = 50 A 80 V (BR)CBO C EmitterBase Breakdown Voltage V I = 50 A 5 V (BR)EBO E Collector Cutoff Current I V = 50V 0.5 A CBO CB Emitter Cutoff Current I V = 4V 0.5 A EBO EB DC Current Gain h V = 3V, I = 100mA 120 270 FE CE C Collector Saturation Voltage V I = 500mA, I = 50mA 0.2 0.4 V CE(sat) C B Transition Frequency f V = 10V, I = 50mA 100 MHz T CE E Output Capacitance C V = 10V, I = 0, f = 1MHz 14 20 pF ob CB E.102 .280 (7.11) (2.6) .185 (4.7) EC B .100 (2.54) .138 (3.5) .051 (1.29) .022 (0.55)