NTE152 (NPN) & NTE153 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications. Features: Good Linearity of h FE Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A E Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W C C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched comple- mentary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 90 V (BR)CEO C B Collector Cutoff Current I V = 90V, I = 0 20 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 0.5A 40 200 FE1 CE C h V = 5V, I = 3A 15 FE2 CE C CollectorEmitter Saturation Voltage V I = 3A, I = 0.3A 1.5 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 3A 1.5 V BE CE C Transition Frequency f V = 5V, I = 0.5A 3 8 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 85 pF ob CB E.420 (10.67) Max .110 (2.79) .500 .147 (3.75) (12.7) Dia Max Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)