X-On Electronics has gained recognition as a prominent supplier of NTE154 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE154 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE154 NTE

NTE154 electronic component of NTE
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See Product Specifications
Part No.NTE154
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 300V; 15mA; 7W; TO39
Datasheet: NTE154 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.275 ea
Line Total: USD 32.75 
Availability - 9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 3.275
100 : USD 2.6
250 : USD 2.525
500 : USD 2.4625
1000 : USD 2.325
2500 : USD 2.2625
5000 : USD 2.225
7500 : USD 2.2

19
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.71
3 : USD 3.332
7 : USD 2.576
19 : USD 2.436

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Power Dissipation
Collector Current
Frequency
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We are delighted to provide the NTE154 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE154 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: High Voltage: V = 300V Min I = 5mA CEO C Low Capacitance: C = 3pF Max V = 20V ob CB High Frequency: f = 50MHz Min I = 15mA t C High Power Dissipation: P = 7W T = +25C D C Absolute Maximum Ratings: (Note 1) Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBO Collector to Emitter Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Total Power Dissipation (Note 3, Note 4), P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Lead Temperature (During Soldering, 60sec), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C L Note 1. These ratings are limiting values above which the serviceability of this device may be impaired. Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 3. These ratings are steady state limits. Note 4. These ratings give a maximum junction temperature of +200C and junction to case thermal resistance of +25C/W (derating factor of 40mW/C) junction to ambient thermal resistance of +175C/W (derating factor of 5.71mW/C).Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V I = 100 A, I = 0 300 V (BR)CBO C E Emitter Base Breakdown Voltage V I = 100 A, I = 0 7 V (BR)EBO E C Collector Cutoff Current I I = 0, V = 200V 1.0 100 nA CBO E CB I = 0, V = 200V, T = +125C 0.2 5.0 A E CB A Emitter Cutoff Current I I = 0, V = 6V 1.0 100 nA EBO C EB DC Current Gain h I = 1mA, V = 20V 20 50 FE C CE I = 10mA, V = 20V, Note 5 40 100 C CE I = 30mA, V = 20V, Note 5 40 100 C CE Collector Emitter Sustaining Voltage V I = 5mA, I = 0, Note 2, Note 5 300 V CEO(sus) C B Base Emitter Saturating Voltage V I = 20mA, I = 2mA, Note 5 0.74 0.85 V BE(sat) C B Collector Emitter Saturating Voltage V I = 20mA, I = 2mA, Note 5 0.35 1.0 V CE(sat) C B High Frequency Current Gain h I = 15mA, V = 150V, f = 20MHz 2.5 4.0 fe C CE I = 3mA, V = 270V, f = 20MHz 2.0 2.5 C CE I = 30mA, V = 30V, f = 20MHz, 2.0 4.0 C CE R = 9k L Collector Base Capacitance C I = 0, V = 20V 2.5 3.0 pF cb E CB Emitter Base Capacitance C I = 0, V = 500mV 45 70 pF eb C EB Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 5. Pulse Conditions: Length = 300 s, Duty Cycle = 1%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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