NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: High Voltage: V = 300V Min I = 5mA CEO C Low Capacitance: C = 3pF Max V = 20V ob CB High Frequency: f = 50MHz Min I = 15mA t C High Power Dissipation: P = 7W T = +25C D C Absolute Maximum Ratings: (Note 1) Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBO Collector to Emitter Voltage (Note 2), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Total Power Dissipation (Note 3, Note 4), P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Lead Temperature (During Soldering, 60sec), T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C L Note 1. These ratings are limiting values above which the serviceability of this device may be impaired. Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 3. These ratings are steady state limits. Note 4. These ratings give a maximum junction temperature of +200C and junction to case thermal resistance of +25C/W (derating factor of 40mW/C) junction to ambient thermal resistance of +175C/W (derating factor of 5.71mW/C).Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V I = 100 A, I = 0 300 V (BR)CBO C E Emitter Base Breakdown Voltage V I = 100 A, I = 0 7 V (BR)EBO E C Collector Cutoff Current I I = 0, V = 200V 1.0 100 nA CBO E CB I = 0, V = 200V, T = +125C 0.2 5.0 A E CB A Emitter Cutoff Current I I = 0, V = 6V 1.0 100 nA EBO C EB DC Current Gain h I = 1mA, V = 20V 20 50 FE C CE I = 10mA, V = 20V, Note 5 40 100 C CE I = 30mA, V = 20V, Note 5 40 100 C CE Collector Emitter Sustaining Voltage V I = 5mA, I = 0, Note 2, Note 5 300 V CEO(sus) C B Base Emitter Saturating Voltage V I = 20mA, I = 2mA, Note 5 0.74 0.85 V BE(sat) C B Collector Emitter Saturating Voltage V I = 20mA, I = 2mA, Note 5 0.35 1.0 V CE(sat) C B High Frequency Current Gain h I = 15mA, V = 150V, f = 20MHz 2.5 4.0 fe C CE I = 3mA, V = 270V, f = 20MHz 2.0 2.5 C CE I = 30mA, V = 30V, f = 20MHz, 2.0 4.0 C CE R = 9k L Collector Base Capacitance C I = 0, V = 20V 2.5 3.0 pF cb E CB Emitter Base Capacitance C I = 0, V = 500mV 45 70 pF eb C EB Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 5. Pulse Conditions: Length = 300 s, Duty Cycle = 1%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)