NTE157 Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39) Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in lineoperated equipment such as audio output amplifiers, lowcurrent, highvoltage converters, and AC line relays. Features: Excellent DC Current Gain: h = 30 to 250 I = 100mA FE C CurrentGain Bandwidth Product: f = 10MHz (Min) I = 50mA T C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction to case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25C/W JC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA (Inductive), L = 50mH 300 V CEO(sus) C CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 300 V (BR)CEO C B Collector Cutoff Current I V = 200V, I = 0 0.1 mA CEO CE B I V = 300V, V = 1.5V 0.1 mA CEX CE EB(off) V = 300V, V = 1.5V, T = +100C 1.0 mA CE EB(off) C I V = 325V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 10 A EBO EB CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 50mA, V = 10V 25 FE C CE I = 100mA, V = 10V 30 250 C CE I = 250mA, V = 10V 15 C CE I = 500mA, V = 10V 5 C CE CollectorEmitter Saturation Voltage V I = 100mA, I = 10mA 1 V CE(sat) C B I = 250mA, I = 25mA 2.5 C B I = 500mA, I = 100mA 10 C B BaseEmitter Voltage V I = 100mA, V = 10V 1 V BE C CE Dynamic Characteristics CurrentGainBandwidth Product f I = 50mA, V = 10V, f = 10MHz, Note 2 10 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 100kHz 25 pF ob CB E SmallSignal Current Gain h I = 100mA, V = 10V, f = 1kHz 20 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 2. f is defined as the frequency at which h extrapolates to unity. T fe .330 (8.38) Max .175 (4.45) .450 Max (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia EC B .090 (2.28) .130 (3.3) Max