NTE16001 Silicon NPN Transistor Video IF Amp Features: High Transistion Frequency Good Linearity of DC Current Gain An M Type Mold package that Allows Easy Manual and Automatic Insertion. Can be Firmly Mounted Flush to PC Board Surface. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA C Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 10 A CEO CE B CollectorBase Voltage V I = 10 A, I = 0 45 V CBO C E CollectorEmitter Voltage V I = 1mA, I = 0 35 V CEO C B EmitterBase Voltage V I = 10 A, I = 0 4 V EBO E C DC Current Gain h V = 10V, I = 10mA 20 50 100 FE CB E CollectorEmitter Saturation Volatge V I = 20mA, I = 2mA 0.5 V CE(sat) C B Transistion Frequency f V = 10V, I = 10mA, f = 300 500 MHz T CB E 100MHz SmallSignal Reverse Transfer Capaci- C V = 10V, I = 1mA 1.5 pF re CE C tance Power Gain PG V = 10V, I = 10mA, f = 58MHz 18 dB CB E