X-On Electronics has gained recognition as a prominent supplier of NTE16005 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE16005 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE16005 NTE

NTE16005 electronic component of NTE
NTE16005 NTE
NTE16005 Bipolar Transistors - BJT
NTE16005  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE16005
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 75V; 2A; 10W; TO39
Datasheet: NTE16005 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
23: USD 3.3165 ea
Line Total: USD 76.28 
Availability - 3
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ: 23  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 23
Multiples : 1
23 : USD 3.3165
25 : USD 2.5125
250 : USD 1.9875
500 : USD 1.875
1000 : USD 1.7875
2500 : USD 1.725
5000 : USD 1.6875
7500 : USD 1.65

32
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 2.716
3 : USD 2.436
9 : USD 1.988
25 : USD 1.876

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE16005 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE16005 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 75 V (BR)CEO) C B Collector Cutoff Current I V = 100V, V = 1.5V 0.1 mA CEX CE BE V = 70V, V = 1.5V, T = +150C 5.0 mA CE BE C Emitter Cutoff Current I V = 7V, I = 0 0.1 mA EBO BE C ON Characteristics (Note 1) DC Current Gain h I = 500mA, V = 4V 30 130 FE C CE I = 1A, V = 2V 10 C CE CollectorEmitter Saturation Voltage V CE(sat) NTE16004 I = 500mA, I = 50mA 0.7 V C B NTE16005 0.5 V BaseEmitter ON Voltage V I = 500mA, V = 4V 1.1 V BE(on) C CE SmallSignal Characteristics SmallSignal Current Gain h I = 50mA, V = 4V, f = 10MHz 5 fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Switching Characteristics TurnOn Time t on NTE16004 V = 30V, I = 500mA, I = 50mA 100 ns CC C B1 NTE16005 80 ns TurnOff Time t off NTE16004 1000 ns V = 30V, I = 500mA, CC C I = I = 50mA B1 B2 NTE16005 800 ns .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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