NTE16007 Silicon NPN Transistor General Purpose for Medium Power Applications Description: The NTE16007 is a silicon NPN diffused-junction power transistor in a TO8 type package intended for a wide variety of applications in industrial and military equipment. This device is particularly useful in power-switching circuits such as in DC-to-DC converters, inverters, choppers, solenoid and relay controls and as class A and class B push-pull audio and servo amplifiers. Absolute Maximum Ratings: Collector-to -Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V CEO Collector-to-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO Emitter-to-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EBO Continuous Collector Current, I 3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Power Dissipation, P T T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W A Derate Linearly Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.010W/ C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.1W C Derate Linearly Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/ C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200 C opr Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200 C stg Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Breakdown Voltage V I = 100mA 55 - - V (BR)CEO C Collector-Base Breakdown Voltage V I = 100A 100 - - V (BR)CBO C Collector-Emitter Breakdown Voltage V V = 1.5V, I = 0.25mA 100 - - V (BR)CEX EB C Collector-Base Cutoff Current I V = 50V - - 15 A CBO CB Emitter-Base Cutoff Current I V = 12V - - 15 A EBO EB ON Characteristics (Note 1) Forward-Current Transfer Ratio h V = 4V, I = 750mA 35 - 100 FE CE C Collector-Emitter Saturation Voltage V I = 750mA, I = 40mA - - 0.75 V CE(sat) C B Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2.0%.Electrical Characteristics (Con t): Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Forward Current Transfer Ratio f V = 28V, I = 5mA 600 - - kHz hfb CB C Output Capacitance C V = 10V, I = 0, f = 100kHz to 1MHz - - 400 pF obo CB E Switching Characteristics Turn-On Time t + t V = 12V, R = 15.9, - - 25 s on off CC C I = I = 35mA, I = 65mA B0 B2 B1 .650 (16.51) Dia Max .524 (13.31) Dia Max .330 (8.38) Max .360 (9.14) Min .030 (.762) Base Collector/Case Emitter .292 (7.42) Max