NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: CollectorEmitter Voltage: V = 1500V CEX CollectorEmitter Sustaining Voltage: V = 700V CEO(sus) Switching Times With Inductive Loads: t = 0.4 s (Typ) I = 4.5A f C Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Peak Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Total Device Dissipation (T = +95C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W C D Derate Above 95C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +115C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +115C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6C/W thJC Maximum Lead Temperature (For Soldering, 1/8 from case for 5sec), T . . . . . . . . . . . . . . . +275C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 700 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 1.0 mA CES CE BE EmitterBase Voltage V I = 10mA, I = 0 5 V EBO E C ON Characteristics (Note 2) DC Current Gain h I = 4.5A, V = 5V 2.25 FE C CE CollectorEmitter Saturation Voltage V I = 4.5A, I = 2A 5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4.5A, I = 2A 1.5 V BE(sat) C B Dynamic Characteristics Current GainBandwidth Product f I = 100mA, V = 5V, f = 1MHz 4 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 1MHz 125 pF ob CB E Switching Characteristics Fall Time t I = 4.5A, I = 1.8A, L = 10 H 0.6 s f C B B Note 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2% .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case