X-On Electronics has gained recognition as a prominent supplier of NTE164 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE164 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE164 NTE

NTE164 electronic component of NTE
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See Product Specifications
Part No.NTE164
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 1A 3-Pin(2+Tab) TO-3
Datasheet: NTE164 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 9.2125 ea
Line Total: USD 46.06 
Availability - 9
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 1
5 : USD 9.2125
25 : USD 8.075
100 : USD 7.1
250 : USD 6.7
500 : USD 6.525
1000 : USD 6.35
2500 : USD 6.25
5000 : USD 6.025

3
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 10.388
3 : USD 7.14
7 : USD 6.762

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE164 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE164 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE164 Silicon NPN Transistor TV Vertical Output Description: The NTE164 is a high voltage silicon NPN transistor in a TO3 type package designed for color TV vertical output applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A E Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C C Maximum Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 500V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 5 A EBO EB C DC Current Gain h V = 15V, I = 2A 5 20 FE CE C CollectorEmitter Saturation Voltage V I = 2A, I = 0.6A 5.0 8.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 2A, I = 0.6A 1.5 V BE(sat) C B Transition Frequency f V = 10V, I = 0.1A 3 MHz T CE C Capacitance C V = 10V, I = 0, f = 1MHz 95 pF ob CB E Fall Time t I = 2A, I = 0.6A 0.5 1.0 s f CP B1.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) 1.187 (30.16) Emitter .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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