NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case for 10sec max.), T . . . . . . . . +260C L Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2% Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics CollectorBase Breakdown Voltage V I = 0.1 A, I = 0 40 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 40 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 0.1 A, I = 0 12 V (BR)EBO E E DC Current Gain h V = 5V, I = 2mA 7000 70000 FE CE C V = 5V, I = 100mA 20000 CE C Collector Cutoff Current I V = 40V, I = 0 100 nA CBO CB E V = 40V, I = 0, T = +100C 20 A CB E AElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics (Contd) Emitter Cutoff Current I V = 12V, I = 0 100 nA EBO EB C CollectorEmitter Saturation Voltage V I = 200mA, I = 0.2mA 1.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 200mA, I = 0.2mA 1.6 V BE(sat) C B BaseEmitter Voltage V V = 5V, I = 200mA 1.5 V BE CE C Dynamic Characteristics SmallSignal Current Gain h V = 5V, I = 2mA, f = 1kHz 7000 fe CE C Current GainHigh Frequency h V = 5V, I = 2mA, f = 1kHz 15.6 dB fe CE C Current GainBandwidth Product f V = 5V, I = 2mA, f = 10MHz 60 MHz T CE C Input Impedance h V = 5V, I = 2mA, f = 1kHz 650 k ie CE C CollectorBase Capacitance C V = 10V, f = 1MHz 7.6 10.0 pF cb CB Emitter Capacitance C V = 0.5V, f = 1MHz 10.5 pF eb EB Noise Voltage e I = 0.6mA, V = 5V, 195 230 nV/ Hz n C CE R = 160k , f = 10Hz to 10kHz, G B.W. = 15.7kHz .135 (3.45) Min .210 (5.33) Max Seating Plane C B .021 (.445) Dia Max .500 (12.7) E Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max