NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for highspeed switching and linear amplifier applications for highvoltage operational am- plifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: TO66 Type Package Collector Emitter Sustaining Voltage: NTE38: V = 350V I = 200mA CEO(sus) C NTE175: V = 300V I = 200mA CEO(sus) C Second Breakdown Collector Current: NTE38 I = 875mA V = 40V S/b CE NTE175 I = 350mA V = 100V S/b CE Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector Base Voltage, V CB NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V EmitterBase Voltage, V 6Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Power Dissipation (T = +25C), P 35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5C/W JC Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage NTE38 V I = 200mA, I = 0 350 V CEO(sus) C B NTE175 300 V CollectorEmitter Sustaining Voltage NTE38 Only V I = 200mA, V = 1.5V, L = 10mH 400 V CEX(sus) C BE V I = 200mA, I = 0, R = 50 375 V CER(sus) C B BE EmitterBase Breakdown Voltage NTE38 Only V I = 0.5mA, I = 0 6 V EBO E C Collector Cutoff Current I V = 150V, I = 0 5 mA CEO CE B Collector Cutoff Current NTE38 I V = 250V, V = 1.5V 0.5 mA CEV CE BE(off) V = 250V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C V = 315V, V = 1.5V 0.5 mA CE BE(off) V = 315V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C V = 360V, V = 1.5V 0.5 mA CE BE(off) V = 360V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C NTE175 I V = 450V, V = 1.5V 1.0 mA CEX CE BE(off) V = 300V, V = 1.5V, T = +150C 3.0 mA CE BE(off) C Emitter Cutoff Current I V = 6V, I = 0 0.5 mA EBO EB C ON Characteristics (Note 2) DC Current Gain NTE38 h I = 1A, V = 4V 10 100 FE C CE NTE175 I = 0.1A, V = 10V 40 C CE I = 1A, V = 2V 8 80 C CE I = 1A, V = 10V 25 100 C CE CollectorEmitter Saturation Voltage NTE38 V I = 1A, I = 125mA 2.0 V CE(sat) C B NTE175 0.75 V BaseEmitter Saturation Voltage V NTE38 V I = 1A, I = 125mA 1.4 BE(sat) C B NTE175 I = 1A, I = 100mA 1.4 V C B BaseEmitter ON Voltage NTE175 Only V I = 1A, V = 10V 1.4 V BE(on) C CE Dynamic Characteristics Current Gain Bandwidth Product NTE38 f I = 200mA, V = 10V, f = 5MHz, 20 MHz T C CE test Note 3 NTE175 15 MHz Output Capacitance (NTE175 Only) C V = 10V, I = 0, f = 1MHz 120 pF ob CB E Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. f = h f T fe test