X-On Electronics has gained recognition as a prominent supplier of NTE175 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE175 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE175 NTE

NTE175 electronic component of NTE
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See Product Specifications
Part No.NTE175
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 300V 2A 2-Pin(2+Tab) TO-66
Datasheet: NTE175 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 16.1599 ea
Line Total: USD 161.6 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 16.1599
50 : USD 5.9281
100 : USD 5.4711
200 : USD 5.0776
500 : USD 4.7349

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.7165
3 : USD 6.362
7 : USD 6.0149

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE175 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE175 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for highspeed switching and linear amplifier applications for highvoltage operational am- plifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: TO66 Type Package Collector Emitter Sustaining Voltage: NTE38: V = 350V I = 200mA CEO(sus) C NTE175: V = 300V I = 200mA CEO(sus) C Second Breakdown Collector Current: NTE38 I = 875mA V = 40V S/b CE NTE175 I = 350mA V = 100V S/b CE Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: CollectorEmitter Voltage, V CEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector Base Voltage, V CB NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V EmitterBase Voltage, V 6Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Power Dissipation (T = +25C), P 35W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5C/W JC Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle 10%.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) CollectorEmitter Sustaining Voltage NTE38 V I = 200mA, I = 0 350 V CEO(sus) C B NTE175 300 V CollectorEmitter Sustaining Voltage NTE38 Only V I = 200mA, V = 1.5V, L = 10mH 400 V CEX(sus) C BE V I = 200mA, I = 0, R = 50 375 V CER(sus) C B BE EmitterBase Breakdown Voltage NTE38 Only V I = 0.5mA, I = 0 6 V EBO E C Collector Cutoff Current I V = 150V, I = 0 5 mA CEO CE B Collector Cutoff Current NTE38 I V = 250V, V = 1.5V 0.5 mA CEV CE BE(off) V = 250V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C V = 315V, V = 1.5V 0.5 mA CE BE(off) V = 315V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C V = 360V, V = 1.5V 0.5 mA CE BE(off) V = 360V, V = 1.5V, T = +100C 5.0 mA CE BE(off) C NTE175 I V = 450V, V = 1.5V 1.0 mA CEX CE BE(off) V = 300V, V = 1.5V, T = +150C 3.0 mA CE BE(off) C Emitter Cutoff Current I V = 6V, I = 0 0.5 mA EBO EB C ON Characteristics (Note 2) DC Current Gain NTE38 h I = 1A, V = 4V 10 100 FE C CE NTE175 I = 0.1A, V = 10V 40 C CE I = 1A, V = 2V 8 80 C CE I = 1A, V = 10V 25 100 C CE CollectorEmitter Saturation Voltage NTE38 V I = 1A, I = 125mA 2.0 V CE(sat) C B NTE175 0.75 V BaseEmitter Saturation Voltage V NTE38 V I = 1A, I = 125mA 1.4 BE(sat) C B NTE175 I = 1A, I = 100mA 1.4 V C B BaseEmitter ON Voltage NTE175 Only V I = 1A, V = 10V 1.4 V BE(on) C CE Dynamic Characteristics Current Gain Bandwidth Product NTE38 f I = 200mA, V = 10V, f = 5MHz, 20 MHz T C CE test Note 3 NTE175 15 MHz Output Capacitance (NTE175 Only) C V = 10V, I = 0, f = 1MHz 120 pF ob CB E Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. f = h f T fe test

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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