NTE179 Germanium PNP Transistor Audio Power Amplifier, High Current Switch Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for highcurrent switch- ing applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: Low CollectorEmitter Saturation Voltage: V = 0.5V (Max) I = 5A CE(sat) C Absolute Maximum Ratings: CollectorEmitter Voltage, V 40V CEO CollectorBase Voltage, V . 90V CB EmitterBase Volatge, V . 2V EB Continuous Collector Current, I . 25A C Base Current, I 5A B Total Device Dissipation (T = +25C), P . 106W C D Derate above +25C . 1.25W/C Operating Junction Temperature, T . 65 to + 110C J Storage Junction Temperature, T 65 to + 110C stg Thermal Resistance, JunctiontoCase, R . 0.8C/W thJC Electrical Characteristics: (T = +25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorBase Breakdown Voltage V I = 100mA, I = 0 40 V (BR)CBO C B EmitterBase Breakdown Voltage V I = 100mA, I = 0 2 V (BR)EBO E C CollectorEmitter Sustaining Voltage V I = 5A 40 V CE(sus) C Collector Cutoff Current I V = 2V, I = 0 200 A CBO CB E I V = 90V, V = 0.2V 20 mA CEX CE BE(off) CollectorEmitter Cutoff Current I V = 50V, R = 100 10 mA CER CE EBElectrical Characteristics (Contd): (T = +25C unless otherwise noted) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 1A, V = 2V 65 300 FE C CE I = 5A, V = 2V 55 C CE CollectorEmitter Saturation Voltage V I = 5A, I = 100mA 0.5 V CE(sat) C B BaseEmitter ON Voltage V I = 1A, V = 2V 0.45 V BE(on) C CE I = 5A, V = 2V 0.60 V C CE Dynamic Characteristics Current GainBandwidth Product f I = 500mA, V = 10V 500 kHz T C CE .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .665 .215 (5.45) (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case