NTE180 (PNP) & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: High DC Current Gain: h = 25 100 I = 7.5A FE C Excellent Safe Operating Area Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CER CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CB CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.14W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.875C/W thJC Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, R = 100 , Note 1 100 V (BR)CER C BE CollectorEmitter Sustaining Voltage V I = 200mA, Note 1 90 V CEO(sus) C CollectorBase Cutoff Current I V = 100V, I = 0 1.0 mA CBO CB E V = 100V, I = 0, T = +150C 5.0 mA CB E C EmitterBase Cutoff Current I V = 4V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Contd): (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 7.5A, V = 2V 25 100 FE C CE BaseEmitter ON Voltage V I = 7.5A, V = 2V 1.3 V BE(on) C CE CollectorEmitter Saturation Voltage V I = 7.5A, I = 750mA 0.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 7.5A, I = 750mA 1.3 V BE(sat) C B Dynamic Characteristics Current GainBandwidth Product f I = 1A, V = 10V, f = 1MHz 2.0 MHz T C CE Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%. Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and NTE181 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case