NTE186A NTE

NTE186A (NPN) & NTE187A (PNP) Silicon Complementary Transistors Medium Power Audio Amplifier Features: 5W Output in Complementary Pair Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 50V CBO CollectorEmitter Voltage, V ...................................................... 40V CEO EmitterBase Voltage, V .......................................................... 5V EBO Peak Collector Current, I ........................................................... 3A CP Base Current, I ................................................................ 600mA B Collector Power Dissipation (T = +25C), P ......................................... 10W C C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 50 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 10mA, I = 0 40 V (BR)CEO C B Collector Cutoff Current I V = 20V, I = 0 1 A CBO CB E I V = 12V, I = 0 100 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C DC Current Gain h V = 5V, I = 1A 50 120 220 FE CE C Transition Frequency f V = 5V, I = 500mA 150 MHz T CE C BaseEmitter Saturation Voltage V I = 2A, I = 200mA 1.5 V BE(sat) C B CollectorEmitter Saturation Voltage V I = 2A, I = 200mA 0.4 1.0 V CE(sat) C B Collector Output Capacitance C V = 5V, I = 0, f = 1MHz 50 pF ob CB E Rev. 413.394 (10.0) .165 (4.2) Dia C .492 (12.5) .335 (8.5) .197 (5.0) .138 (3.5) .059 (1.5) x 45 Chamf .335 (8.5) .119 (3.0) .532 (13.5) BC E .098 (2.5) .181 (4.6)