X-On Electronics has gained recognition as a prominent supplier of NTE193 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE193 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE193 NTE

NTE193 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE193
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 50V; 1A; 560mW; TO92
Datasheet: NTE193 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.1 ea
Line Total: USD 52.5 
Availability - 27
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
27
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 25
Multiples : 1
25 : USD 2.1
250 : USD 1.675
500 : USD 1.575
1000 : USD 1.525
2500 : USD 1.4625
5000 : USD 1.425
7500 : USD 1.4
10000 : USD 1.3875

35
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.338
3 : USD 2.114
10 : USD 1.764
25 : USD 1.68
28 : USD 1.666

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE193 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE193 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current (Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Power Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW C T Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW A T Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case for 10sec max), T . . . . . . . . +260C L Note 1. Determined from power limitations due to saturation voltage at this current. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Characteristics Collector Cutoff Current I V = 50V 0.1 A CBO CB V = 50V, T = +100C 15 A CB A Emitter Cutoff Current I V = 5V 0.1 A EBO EB Collector Saturation Voltage V I = 3mA, I = 50mA 0.30 V CE(sat) B C Base Saturation Voltage V I = 3mA, I = 50mA 0.85 V BE(sat) B C DC Current Gain h V = 4.5V, I = 2mA 180 540 FE CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics SmallSignal Current Gain h V = 4.5V, Frequency of 180 fe C Measurement =1000cps V = 10V, I = 1mA, f = 1kc 150 300 CE C Input Impedance h V = 10V, I = 1mA, f = 1kc 4200 8300 ie CE C Output Admittance h V = 10V, I = 1mA, f = 1kc 10 20 mhos oe CE C 3 Voltage Feedback Ratio h V = 10V, I = 1mA, f = 1kc 0.2 0.4 x 10 re CE C .350 (8.89) .187 (4.76) .156 (3.95) .325 (8.27) .125 (3.17) Dia .500 (12.7) Min .017 (0.45) Dia .100 (2.54) .050 (1.27) 3 .263 (6.7) Max .127 (3.25) 2 1 Pin Number 1 2 3 NTE192/193 C B E NTE192A/193A B C E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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