NTE192 (NPN) & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These devices are especially suited for high level linear amplifiers or medium speed switching circuits in industrial control applications. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current (Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Power Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW C T Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW A T Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case for 10sec max), T . . . . . . . . +260C L Note 1. Determined from power limitations due to saturation voltage at this current. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Characteristics Collector Cutoff Current I V = 50V 0.1 A CBO CB V = 50V, T = +100C 15 A CB A Emitter Cutoff Current I V = 5V 0.1 A EBO EB Collector Saturation Voltage V I = 3mA, I = 50mA 0.30 V CE(sat) B C Base Saturation Voltage V I = 3mA, I = 50mA 0.85 V BE(sat) B C DC Current Gain h V = 4.5V, I = 2mA 180 540 FE CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics SmallSignal Current Gain h V = 4.5V, Frequency of 180 fe C Measurement =1000cps V = 10V, I = 1mA, f = 1kc 150 300 CE C Input Impedance h V = 10V, I = 1mA, f = 1kc 4200 8300 ie CE C Output Admittance h V = 10V, I = 1mA, f = 1kc 10 20 mhos oe CE C 3 Voltage Feedback Ratio h V = 10V, I = 1mA, f = 1kc 0.2 0.4 x 10 re CE C .350 (8.89) .187 (4.76) .156 (3.95) .325 (8.27) .125 (3.17) Dia .500 (12.7) Min .017 (0.45) Dia .100 (2.54) .050 (1.27) 3 .263 (6.7) Max .127 (3.25) 2 1 Pin Number 1 2 3 NTE192/193 C B E NTE192A/193A B C E