NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA C Total Device Dissipation (T = +25C), P 350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Total Device Dissipation (T = +25C), P 1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W thJC Thermal Resistance, JunctiontoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . 357C/W thJA Note 1 R is measured with the device soldered into a typical printed circuit board. thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 2 180 V (BR)CEO C B CollctorBase Breakdown Voltage V I = 100 A, I = 0 180 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 120V, I = 0 50 nA CBO CB E V = 120V, I = 0, T = +100C 50 nA CB E A Emitter Cutoff Current I V = 4V, I = 0 50 nA EBO EB C Note 2 Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h V = 5V, I = 1mA 80 FE CE C V = 5V, I = 10mA 80 250 CE C V = 5V, I = 50mA 30 CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.15 V CE(sat) C B I = 50mA, I = 5mA 0.20 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 1.0 V BE(sat) C B I = 50mA, I = 5mA 1.0 V C B SmallSignal Characteristics Current GainBandwidth Product f V = 10V, I = 10mA, f = 100MHz 100 300 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 6 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 1MHz 20 pF ibo BE C SmallSignal Current Gain h V = 10V, I = 1mA, f = 1kHz 50 200 fe CE C Noise Figure NF V = 5V, I = 250 A, R = 1k , 8.0 dB CE C S f = 10Hz to 15.7kHz Note 2 Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max