NTE199 Silicon NPN Transistor Low Noise, High Gain Amplifier Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu- ration voltage, tight beta control, and excellent low noise characteristics. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Steady State Collector Current (Note 1), I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW A T Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Total Power Dissipation (T = +55C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW A T Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 from case, 10sec max), T . . . . . . . . . . . . . . . . . +260C L Note 1. Determined from power limitations due to saturation voltages at this current Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Cutoff Current I V = 50V 30 nA CBO CB V = 50V, T = +100C 10 A CB A Collector Cutoff Current I V = 50V 30 nA CES CB Emitter Cutoff Current I V = 5V 50 nA EBO EBElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics (Contd) Forward Current Transfer Ratio h V = 5V, I = 2mA 400 800 FE CE C V = 5V, I = 100 A, Note 2 300 CE C Breakdown Voltage V I = 10mA, Note 3 50 V (BR)CEO C CollectortoEmitter Breakdown Voltage V I = 10 A 70 V (BR)CBO C CollectortoBase Breakdown Voltage V I = 10 A 5 V (BR)EBO E EmittertoBase Collector Saturation Voltage V I = 10mA, I = 1mA, Note 3 0.125 V CE(sat) C B Base Saturation Voltage V I = 10mA, I = 1mA, Note 3 0.78 V BE(sat) C B Base Emitter ON Voltage V V = 10V, I = 2mA 0.5 0.9 V BE(on) CE C Dynamic Characteristics Forward Current Transfer Ratio h V = 5V, I = 2mA, f = 1kHz 400 1200 fe CE C Output Capacitance, C V = 10V, I = 0, f = 1kHz 4 pF cb CB E Common Base Noise Figure NF I = 100 A, V = 5V, 3 dB C CE R = 5k , f = 1kHz g Note 2. Typically, a minimum of 95% of the distribution is above this value. Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2% .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max