NTE213 Germanium PNP Transistor High Power, High Gain Amplifier Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed highpower, highgain applications in highreliability industrial equipment. Absolute Maximum Ratings: CollectorEmitter Voltage, V 60V CEO CollectorEmitter Voltage, V 75V CES CollectorBase Voltage, V . 75V CB EmitterBase Voltage, V 40V EB Collector Current, I 30A C Total Device Dissipation (T = +25C), P . 170W C D Derate Above 25C . 0.5W/C Operating Junction Temperature Range, T 65 to +110C J Thermal Resistance, JunctiontoCase, R . 0.5C/W thJC Elwectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1A, I = 0, Note 1 60 V (BR)CEO C B V I = 300mA, V = 0, Note 1 75 V (BR)CES C BE Floating Potential V V = 75V, I = 0 1.0 V EBF CB E Collector Cutoff Current I V = 2V, I = 0 0.8 0.2 mA CBO CB E V = 74V, I = 0 0.9 4.0 mA CB E V = 75V, I = 0, T = +71C 4.0 15 mA CB E C Emitter Cutoff Current I V = 25V, I = 0 0.2 4.0 mA EBO BE C V = 30V, I = 0 0.2 4.0 mA BE C V = 40V, I = 0 0.2 4.0 mA BE C V = 40V, I = 0, T = +71C 2.7 15 mA BE C C Note 1. To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 2V, I = 5A 50 75 100 FE CB C V = 2V, I = 15A 25 47 CB C V = 2V, I = 25A 15 38 CB C CollectorEmitter Saturation Voltage V I = 5A, I = 500mA 0.06 0.1 V CE(sat) C B I = 25A, I = 2A 0.2 0.3 V C B BaseEmitter ON Voltage V I = 5A, I = 500mA 0.65 1.0 V BE(on) C B I = 25A, I = 2A 1.0 2.0 V C B Dynamic Characteristics CommonEmitter Cutoff Frequency fe V = 6V, I = 5A 2.0 2.7 kHz CE C 1.250 (31.75 Dia Max 1.005 (25.55) Dia Max .500 (12.7) Max .520 (13.2) Max .710 .312 (7.93) (18.03) Max 1032 UNF2A .190 (4.83) Emitter .345 (8.76) Base Collector/Case