NTE2303 Silicon NPN Transistor Horizontal Deflection Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: CollectorEmitter Voltage: V = 1500V CEX Glassivated BaseCollector Junction Switching Times with Inductive Loads: t = 0.65 s (Typ) I = 2A f C Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A C Continuous Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A B Continuous Emitter Current, I 4.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E Total Power Dissipation (T = +25C), P 65W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C D Derate above 25C 0.65W/. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +125C stg Maximum Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) CollectorEmitter Sustaining Voltage V I = 50mA, I = 0 750 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 1.0 mA CES CE BE Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO EB C ON Characteristics (Note 1) CollectorEmitter Saturation Voltage V I = 2A, I = 660mA 5.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 2A, I = 660mA 1.5 V BE(sat) C B Note 1 Pulse Test: Pulse Width 300 s, Duty Cycle = 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 10V, I = 0, f = 0.1MHz 50 pF ob CB E Current GainBandwidth Product f V = 5V, I = 100mA, f = 1MHz, Note 1 4.0 MHz T CE c test Switching Characteristics Fall Time t I = 2A, I = 600mA, L = 12 H 0.65 s f C B1 B Note 1 Pulse Test: Pulse Width 300 s, Duty Cycle = 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)