NTE2304 Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314) Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, highspeed inverters, converters, and other general highcurrent switching applications. Features: Low CollectorEmitter Saturation Voltage Wide ASO and Resistant to Breakdowns Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Allowable Collector Dissipation (T = +25C ), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Ambient Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 200 FE CE C V = 2V, I = 8A 30 CE C Current GainBandwidth Product f V = 5V, I = 1A 20 MHz T CE C CollectorEmitter Saturation Voltage V I = 8A, I = 0.4A 0.18 0.4 V CE(sat) C B CollectorBase Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CBO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C TurnOn Time t 10I = 10I = I = 2A, 0.2 s on B1 B2 C PW = 20 s Storage Time t 1.0 s stg Fall Time t 0.1 s f.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)