NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier TO3PN Type Package Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO3PN type package designed for use in high power audio amplifier applications and high voltage switching regu- lator circuits. Features: High Collector Emitter Sustaining Voltage: V = 160V CEO(sus) High DC Current Gain: h = 35 Typ I = 8A FE C Low Collector Emitter Saturation Voltage: V = 2V Max I = 8A CE(sat) C Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 160V CEO Collector Base Voltage, V ........................................................ 160V CB EmitterBase Voltage, V .......................................................... 70V EB Collector Current, I C Continuous .................................................................. 16A Peak (Note 1) ................................................................ 20A Continuous Base Current, I .......................................................... 5A B Power Dissipation (T = +25C), P ................................................ 125W C D Operating Junction Temperature Range, T .................................. 65 to +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Thermal Resistance, Junction toCase, R ....................................... 1 C/W thJC Note 1. Pulse Test: Pulse Width 5ms, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 2 160 V CEO(sus) C B CollectorEmitter Cutoff Current I V = 160V, V = 1.5V 0.1 mA CEX CE EB(off) V = 160V, V = 1.5V, T = +150C 5.0 mA CE EB9off) C I V = 80V, I = 0 750 A CEO CE B EmitterBase Cutoff Current I V = 7V, I = 0 1.0 mA EBO BE C CollectorBase Cutoff Current I V = 160V, I = 0 750 A CBO CB E Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Rev. 215Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 2) DC Current Gain h V = 2V, I = 8A 15 35 FE CE C V = 4V, I = 16A 8 15 CE C CollectorEmitter Saturation Voltage V I = 8A, I = 0.8A 2.0 V CE(sat) C B I = 16A, I = 2A 3.5 V C B BaseEmitter Saturation Voltage V I = 16A, I = 2A 3.9 V BE(sat) C B BaseEmitter ON Voltage V V = 4V, I = 16A 3.9 V BE(on) CE C Dynamic Characteristics CurrentGain Bandwidth Product f V = 20V, I = 1A, f = 0.5MHz, 1.0 MHz T CE C Note 3 Output Capacitance C V = 10V, I = 0, f = 0.1MHz 800 pF ob CB E Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. f = h f . T FE test .189 (4.8) .614 (15.6) .787 (20.0) .590 .138 (15.0) (3.5) Dia .889 (22.6) BC E .215 (5.45)