NTE2307 Silicon NPN Transistor High Gain Power Amp Features: High Voltage High DC Current Gain High Collector Power Dissipation Capability Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 200V CBO CollectorEmitter Voltage, V ..................................................... 180V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I ................................................................. 5A C Base Current, I .................................................................... 2A B Collector Power Dissipation (T = +25C), P ......................................... 80W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 100 A CBO CB E I V = 180V, I = 0 10 mA CEO CE B Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 180 V (BR)CEO C B DC Current Gain h V = 5V, I = 1A 500 2000 FE CB C CollectorEmitter Saturation Voltage V I = 1A, I = 20mA 1.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 1A 0.6 0.7 0.8 V BE CE C.190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)