NTE2309 Silicon NPN Transistor High Voltage, High Current Switch Features: High Breakdown Voltage Fast Switching Speed Wide ASO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W A C Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pules test: Pulse Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 400V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 0.4A 10 FE CE C V = 5V, I = 2A 8 CE C Current GainBandwidth Product f V = 10V, I = 0.4A 15 MHz T CE C CollectorEmitter Saturation Voltage V I = 3A, I = 0.6A 2.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 3A, I = 0.6A 1.5 V BE(sat) C B Output Capacitance C V = 10V, f = 1MHz 120 pF ob CBElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 900 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 800 V (BR)CBO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C CollectorEmitter Sustaining Voltage V I = 6A, I = 2A, L = 200 H 800 V CEO(sus) C B V I = 2A, I = 0.4A, L= 1mH, 800 V CEX(sus) C B1 I = 0.4A, Clamped B2 I = 1A, I = 0.2A, L= 2mH, 900 V C B1 I = 0.2A, Clamped B2 TurnOn Time t V = 400V, I = 4A, I = 0.8A, 1.0 s on CC C B1 I = 1.6A, R = 100 B2 L Storage Time t 3.0 s stg Fall Time t 0.7 s f .190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (15.02) (3.22) Dia .787 (20.0) BC E .215 (5.47)