NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings: CollectorEmitter Voltage (V = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V BE CES CollectorEmitter Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V B CEO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (t 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A p Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (t 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A p Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W C D Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2C/W thJC Electrical Charactertistics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 100mA, L = 25mH, Note 1 400 V CEO(sus) C Collector Cutoff Current I V = 1000V, V = 0 1 mA CES CE BE V = 1000V, V = 0, T = +125C 3 mA CE BE C Emitter Cutoff Current I V = 9V, I = 0 10 mA EBO EB C CollectorEmitter Saturation Voltage V I = 6A, I = 1.2A, Note 1 1.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 6A, I = 1.2A, Note 1 1.5 V BE(sat) C B TurnOn Time t I = 6A, I = 1.2A, I = 1.2A 1 s on C B1 B2 Storage Time t 4 s s Fall Time t 0.8 s f Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1.5%..600 .060 (1.52) (15.24) .173 (4.4) C .156 (3.96) .550 Dia. (13.97) .430 (10.92) BC E .500 (12.7) Min .015 (0.39) .055 (1.4) .216 (5.45) NOTE: Dotted line indicates that case may have square corners