NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch TO3P Type Package Description: The NTE2311 is a silicon NPN transistor in a TO3P type case designed for use in high voltage, high speed switching applications. Features: High Blocking Capability: V = 1000V CEX Wide Surge Area: I = 55A 350V CSM Applications: Switchmode Power Supply DC/DC and DC/AC Converters Motor Control Absolute Maximum Ratings: (T = +25C unless otherwise specified) C CollectorEmitter Voltage, V ..................................................... 450V CEO CollectorEmitter Voltage (V = 2.5V), V ....................................... 1000V BE CEX EmitterBase Voltage, V .......................................................... 7V EBO Collector Current (t 5ms), I p C Continuous .................................................................. 15A Peak ....................................................................... 30A Base Current (t 5ms), I p B Continuous ................................................................... 4A Peak ....................................................................... 20A Power Dissipation, P tot T = +25C ................................................................ 150W C T = +60C ................................................................ 115W C Operating Junction Temperature Range, T .................................. 65 to +175C J Thermal Resistance, Junction toCase, R ....................................... 1 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 0, I = 200mA, L = 25mH 450 V CEO(sus) B C EmitterBase Breakdown Voltage V I = 0, I = 50mA 7 30 V (BR)EBO C E T = +25 C 0.2 mA Collector Cutoff Current I V = V , CEX J CE CEX V = 2.5V BE T = +125 C 2.0 mA J I T = +25 C V = V , 0.5 mA J CER CE CEX R = 10 BE T = +125 C 4.0 mA J Rev. 616Electrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Cont,d) Emitter Cutoff Current I I = 0, V = 5V 1 mA EBO C BE ON Characteristics (Note 1) DC Current Gain h I = 8Adc, V = 5Vdc) 10 FE C CE CollectorEmitter Saturation Voltage V I = 8A, I = 1.6A 1.5 V CE(sat) C B I = 12A, I = 2.4A 5.0 V C B BaseEmitter Saturation Voltage V I = 8A, I = 1.6A 1.6 V BE(sat) C B Switching Characteristics (Switching Times on Resistive Load) TurnOn Time t V = 150V, I = 8A, 0.55 1.0 s on CC C I = I = 1.6A B1 B2 Storage Time t 1.5 3.0 s s Fall Time t 0.3 0.8 s f Switching Characteristics (Switching Times on Inductive Load) Storage Time t T = +25 C 3.5 s V = 300V, s J CC V = 5V, BB T = +125 C 5.0 s J L = 3H, B Fall Time t T = +25 C 0.08 s f J I = 8A, C I = 1.6A T = +125 C Bend 0.4 s J Note 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2% .190 (4.82) .615 (15.62) C .787 (20.0) .591 .126 (3.22) (15.02) Dia .787 (20.0) BC E .215 (5.47)