NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a highvoltage, highspeed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: CollectorEmitter Voltage: V = 1500V CE CollectorEmitter Sustaining Voltage: V = 700V CEO(sus) Switching Time with Inductive Loads: t = 0.5 s (Typ) I = 4.5A f C Internal Flyback Diode Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V CEO(sus) CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W thJC Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T . . . . . . . . . . . . . . +275C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (T = +25C, unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 1) CollectorEmitter Sustaining Voltage V I = 100mA, I = 0 700 V CEO(sus) C B Collector Cutoff Current I V = 1500V, V = 0 0.1 mA CES CE BE V = 1500V, V = 0, 2.0 mA CE BE T = +125C C EmitterBase Leakage Current I V = 6V, I = 0 300 mA EBO EB CElectrical Characteristics (Contd): (T = +25C, unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 4.5A, V = 5V 2.25 FE C CE CollectorEmitter Saturation Voltage V I = 4.5A, I = 2A 1 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4.5A, I = 2A 1.3 V BE(sat) C B Dynamic Characteristics CurrentGain Bandwidth Product f I = 0.1A, V = 5V, f = 1MHz 7 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 0.1MHz 125 pF ob CB E Switching Characteristics Storage Time t I = 4.5A, I = 1.8A, 8.0 s s C B L = 10 H B Fall Time t 0.5 s f Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. .600 .060 (1.52) (15.24) .173 (4.4) C .156 .550 (3.96) .430 (13.97) Dia. (10.92) BC E .500 (12.7) Min .015 (0.39) .055 (1.4) .216 (5.45) NOTE: Dotted line indicates that case may have square corners