NTE2325 Silicon NPN Transistor High Voltage Switch Features: High Reverse Voltage: V = 900V (Max) CBO High Speed Switching: t = 0.7 s (Max) f Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A C Peak Collector Current (Note 1), i . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A cp Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 10% Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorBase Breakdown Voltage V I = 1mA, I = 0 900 V (BR)CBO C E CollectorEmitter Breakdown Voltage V 800 V I = 5mA, R = (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C Collector Cutoff Current I V = 800V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C CollectorEmitter Sustaining Voltage V I = 3A, L = 500 H, I = 1A 800 V CEO(sus) C B V I = 1A, I = 200mA, I = 200mA, 800 V CEX(sus)1 C B1 B2 L = 2mH, Clamped V I = 500mA, I = 100mA, I = 100mA, 900 V CEX(sus)2 C B1 B2 L = 5mH, ClampedElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h V = 5V, I = 200mA 10 FE1 CE C h V = 5V, I = 1A 8 FE2 CE C CollectorEmitter Saturation Voltage V I = 1.5A, I = 300mA 2.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1.5A, I = 300mA 1.5 V BE(sat) C B Dynamic Characteristics Current GainBandwidth Product f V = 10V, I = 200mA 15 MHz T CE C Output Capactiance C V = 10V, f = 1MHz 60 pF ob CB Switching Characteristics TurnOn Time t 1.0 s I = 2A, I = 400mA, I = 800mA, on C B1 B2 R = 200 , V = 400V L CC Storage Time t 3.0 s stg Fall Time t 0.7 s f .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab