X-On Electronics has gained recognition as a prominent supplier of NTE2328 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2328 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2328 NTE

NTE2328 electronic component of NTE
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See Product Specifications
Part No.NTE2328
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Single Transistor - NPN - 200 V - 25 MHz - 150 W - ...
Datasheet: NTE2328 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 10.8875 ea
Line Total: USD 54.44 
Availability - 24
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
24
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 5
Multiples : 1
5 : USD 10.8875
25 : USD 9.525
100 : USD 8.4
250 : USD 7.925
500 : USD 7.7
1000 : USD 7.4875
2500 : USD 7.3875
5000 : USD 7.1125

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2328 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2328 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2328 (NPN) & NTE2329 (PNP) Silicon Complementary Transistors Audio Power Output TO3PBL Type Package Features: Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 5.0 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 5.0 A EBO BE C CollectorEmitter Breakdown Voltage V I = 50mA, I = 0 200 V (BR)CEO C B DC Current Gain h V = 5V, I = 1A 55 160 FE1 CE C h V = 5V, I = 8A 35 60 FE2 CE C Collector Emitter Saturation Voltage V I = 10A, I = 1A 1.5 3.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 8A 1.0 1.5 V BE CE C Transistion Frequency f V = 5V, I = 1A 25 MHz T CE C Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 470 pF ob CB E.810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BC E Note: Collector connected to heat sink.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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