NTE233 Silicon NPN Transistor Video IF, Oscillator Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A T Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Lead Temperature (During Soldering, 1/16 1/32 from case, 10sec), T . . . . . . . . . . . . . . . +230C L Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 100 A, I = 0 30 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 50 nA CBO CB E I V = 30V, I = 0 1 A CEO CE B DC Pulse Current Gain h I = 10mA, V = 10V, Note 1 20 100 FE C CE Collector Saturation Voltage V I = 20mA, I = 0.1mA, Note 1 0.6 V CE(sat) C B CollectorEmitter Sustaining Voltage V I = 1mA, I = 0, Note 1 30 V CEO(sus) C B Current GainBandwidth Product f I = 10mA, V = 10V, 300 700 MHz T C CE f = 100MHz Power Gain, Fixed Neutralization G I = 10mA, V = 10V, 25 dB pe C CE f = 45MHz Reverse Transfer Capacitance C I = 0, V = 10V, f 1MHz 0.6 1.1 pF re E CB Output Admittance, Input Short g I = 10mA, V = 10V, 30 200 mho oe C CE Circuit f = 45MHz Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 1%..135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max