NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w /Damper Diode Applications: Color TV Horizontal Deflection Output Color Display Horizontal Deflection Output Features: High Speed (t = 100nsec) f High Breakdown Voltage (V = 1500V) CBO High Reliability OnChip Damper Diode Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Collector Dissipation (T = +25C), P 60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1500V 1.0 mA CES CE I V = 800V 10 A CBO CB Collector Sustain Voltage V I = 100mA, I = 0 800 V CEO(sus) C B Emitter Cutoff Current I V = 4V 40 130 mA EBO EB Saturation Voltage V I = 5A, I = 1.0A 5 V CE(sat) C B Collector to Emitter Saturation Voltage V I = 5A, I = 1.0A 1.5 V BE(sat) C B Base to EmitterElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit DC Current Gain h V = 5V, I = 1A 8 FE1 CE C h V = 5V, I = 5A 5 10 FE2 CE C Diode Forward Voltage V I = 6A 2 V F EC Fall Time t I = 4A, I = 0.8A, I = 1.6A 0.1 0.3 s f C B1 B2 .221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 (8.0) .866 (22.0) BC E .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)