NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line operated Switchmode Power supplies and electronic light ballasts. Features: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching No Coil Required in Base Circuit for TurnOff (No Current Tail) Absolute Maximum Ratings: CollectorEmitter Sustaining Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V CEO CollectorEmitter Breakdown Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, I B Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Maximum Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W thJC Maximum Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W thJA Maximum Lead Temperature (During Soldering, 1/8 from Case for 5sec), T . . . . . . . . . . . +260C L Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Note 2. Proper strike and creepage distance must be provided.Electrical Characteristics: (T = +25C, unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, L = 25mH 450 V CEO(sus C ) Collector Cutoff Current I V = 450V, I = 0 100 A CEO CE B I V = 1000V, V = 0 100 A CES CE EB V = 1000V, V = 0, T = +125C 500 A CE EB C V = 800V, V = 0, T = +125C 100 A CE EB C Emitter Cutoff Current I V = 9V, I = 0 100 A EBO EB C ON Characteristics BaseEmitter Saturation Voltage V I = 1.3A, I = 0.13A 0.83 1.2 V BE(sat) C B I = 3A, I = 0.6A 0.94 1.3 V C B CollectorEmitter Saturation Voltage V I = 1.3A, I = 0.13A 0.25 0.6 V CE(sat) C B T = +125C 0.27 0.65 V C I = 3A, I = 0.6A 0.35 0.7 V C B T = +125C 0.4 0.8 V C DC Current Gain h I = 0.5A, V = 5V 14 34 FE C CE T = +125C 32 C I = 3A, V = 1V 6 10 V C CE T = +125C 5 8 C I = 1.3A, V = 1V T = +25C 11 17 C CE C to +125C I = 10mA, V = 5V 10 22 C CE Dynamic Characteristics Current Gain Bandwidth Product f I = 0.5A, V = 10V, f = 1MHz 14 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 1MHz 75 120 pF ob CB B Input Capacitance C V = 8V 1000 1500 pF ib EB Dynamic Saturation Voltage: V I = 1.3A, 1 s 5.5 V CE(dsat) C Determined 1 s and 3 s respectively I = 130mA, B1 T = +125C 12.0 V C afterafter rising rising I I reaches reaches 90% 90% ofof final final VV = 300V = 300V B1 CC 3 s 3.0 V I B1B1 T = +125C 7.0 V C I = 3.0A, 1 s 9.5 V C I = 600mA, B1 T = +125C 14.5 V C VV = 300V = 300V CC 3 s 2.0 V T = +125C 7.5 V C Switching Characteristics: Resistive Load (DC 10%, Pulse Width = 20 s) TurnOn Time t I = 3A, I = 600mA, 90 180 ns on C B1 I = 1.5A, V = 300V B2 CC T = +125C 100 ns C TurnOff Time t 1.7 2.5 s off T = +125C 2.1 s C TurnOn Time t I = 1.3A, I = 130mA, 200 300 ns on C B1 I = 650mA, B2 T = +125C 130 ns C VV = 300V = 300V CC TurnOff Time t 1.2 2.5 s off T = +125C 1.5 s C