X-On Electronics has gained recognition as a prominent supplier of NTE2359 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2359 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2359 NTE

NTE2359 electronic component of NTE
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See Product Specifications
Part No.NTE2359
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; TO92; R1:47kO
Datasheet: NTE2359 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.428 ea
Line Total: USD 1.43 
Availability - 88
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
88
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.428
3 : USD 1.274
10 : USD 1.134
16 : USD 1.092
25 : USD 1.022

   
Manufacturer
Product Category
Mounting
Case
Kind Of Transistor
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Base Resistor
Base-Emitter Resistor
Power Dissipation
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2359 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2359 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors w Digital /2 BuiltIn 47k Bias Resistors Features: BuiltIn Bias Resistor (R = 47k , R = 47k ) 1 2 SmallSized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +160C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 A CBO CB E I V = 40V, I = 0 0.5 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 30 53 80 A EBO EB C DC Current Gain h V = 5V, I = 5mA 50 FE CE C Gain Bandwidth Product f V = 10V, I = 5mA T CE C NTE2359 250 MHz NTE2360 200 MHz Output Capacitance C V = 10V, f = 1MHz ob CB NTE2359 3.7 pF NTE2360 5.5 pFElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 5mA, I = 0.25mA 0.1 0.3 V CE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 50 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100 A, R = 50 V (BR)CEO C BE Input OFF Voltage V V = 5V, I = 100 A 0.8 1.1 1.5 V I(off) CE C Input ON Voltage V V = 200mV, I = 5mA 1.0 2.5 5.0 V I(on) CE C Input Resistance R 32 47 62 k 1 Input Resistance Ratio R /R 0.9 1.0 1.1 1 2 Schematic Diagram Collector Collector (Output) (Output) R R 1 1 Base Base (Input) (Input) R R 2 2 Emitter Emitter (GND) (GND) NPN PNP .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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