X-On Electronics has gained recognition as a prominent supplier of NTE236 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE236 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE236 NTE

NTE236 electronic component of NTE
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Part No.NTE236
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 25V; 6A; 20W; TO220; Pout:16W
Datasheet: NTE236 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 20.4624 ea
Line Total: USD 20.46 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 18.2125
25 : USD 15.0125
50 : USD 14.7625
100 : USD 14.0875
250 : USD 13.2875
500 : USD 12.9125
1000 : USD 12.5625

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 22.7764
10 : USD 18.8943
25 : USD 16.8682
100 : USD 15.372
250 : USD 14.9782

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 20.4624
2 : USD 14.2506
4 : USD 13.4694

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Kind Of Transistor
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Frequency
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE236 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE236 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE236 Silicon NPN Transistor Final RF Power Output (P = 16W, 27MHz, SSB) O TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 1014 watt output power class AB amplifier applications in the HF band. Features: High Power Gain: G 12dB, P = 16W, f = 27MHz pe O High Reliability Application: 10 to 14 Watt Output Power Class AB Amplifier Applications in the HF band Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 60V CBO Collector Emitter Voltage (R = ), V ............................................ 25V BE CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I ................................................................. 6A C Collector Dissipation, P C T = 25C .................................................................. 1.7W A T = 25C .................................................................. 20W C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R .................................. 73.5C/W thJA Thermal Resistance, Junction toCase, R .................................... 6.25C/W thJC Rev. 1210Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit EmitterBase Breakdown Voltage V I = 5mA, I = 0 5 V (BR)EBO E C CollectorBase Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, R = 25 V (BR)CEO C BE Collector Cutoff Current I V = 30V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Forward Current Gain h V = 12V, I = 10mA 90 180 FE CE C Output Power P V = 12V, P = 1W, f = 27MHz 16 18 W O CC in Collector Efficiency h V = 12V, P = 1W, f = 27MHz 60 70 % C CC in .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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