NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for gener- alpurpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: Very SmallSized Package High Breakdown Voltage: V = 50V CEO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. For PNP device (NTE2362), voltage and current values are negative. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40Vdc, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 4Vdc 0.1 A EBO BE DC Current Gain h V = 5V, I = 10mA 200 400 FE CE C Gain Bandwidth Product f V = 10V, NTE2361 200 MHz T CE I = 50mA C NTE2362 300 MHzElectrical Characteristics (Contd): (T = 25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance C V = 10Vdc, NTE2361 5.6 pF ob CB f = 1MHz NTE2362 3.7 pF CollectorEmitter Saturation Voltage V I = 100mA, NTE2361 0.15 0.4 V CE(sat) C I = 10mA B NTE2362 0.1 0.3 V BaseEmitter Saturation Voltage V I = 100mA, I = 10mA 0.8 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100 A, R = 50 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 5 V (BR)EBO E C Rise Time t V = 20V, 70 ns CC on I = 100mA, C Storage Time t stg 400 ns I = 10mA, B1B1 I = 100mA B2 Fall Time t NTE2361 50 ns f NTE2362 70 ns Note 1. For PNP device (NTE2362), voltage and current values are negative. Note 2. Conditions apply to both except where noted. .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max