NTE2363 (NPN) & NTE2364 (PNP) Silicon Complementary Transistors High Current General Purpose Amp/Switch Features: Low Saturation Voltage Large Current Capacity and Wide ASO Applications: Power Supplies Relay Drivers Lamp Drivers Automotive Wiring Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Allowable Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Ambient Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1 For PNP device (NTE2364), voltage and current values are negative. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 50V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 A EBO EB C DC Current Gain h (1) V = 2V, I = 100mA 140 280 FE CE C h (2) V = 2V, I = 1.5A 40 FE CE C Gain Bandwidth Product f V = 10V, I = 50mA 150 MHz T CE C Rev. 810Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2363 c V = 10V, f = 1MHz 12 pF ob CB NTE2364 22 pF CollectorEmitter Saturation Voltage NTE2363 V I = 1A, I = 50mA 0.15 0.4 V CE(sat) C B NTE2364 0.3 0.7 V BaseEmitter Saturation Voltage V I = 1A, I = 50mA 0.9 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10A, I = 0 6 V (BR)EBO E C .343 (8.73) Max .492 (12.5) Min .024 (0.62) Max E C B .102 (2.6) Max .059 (1.5) Typ .018 (0.48) .118 (3.0) Max .197 (5.0) .236 (6.0)Dia Max .102 (2.6) Max