NTE2367 (NPN) & NTE2368 (PNP) Silicon Complementary Transistors w Digital /2 BuiltIn 4.7k Bias Resistors Features: BuiltIn Bias Resistor (R = 4.7k, R = 4.7k) 1 2 Small Sized Package (TO92 type) Applications: Switching Circuit Inverter Interface Circuit Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V ...................................................... 50V CBO Collector to Emitter Voltage, V .................................................... 50V CEO Emitter to Base Voltage, V ....................................................... 10V EBO Collector Current, I C Continuous ............................................................... 100mA Peak .................................................................... 200mA Collector Dissipation, P ........................................................ 300mW C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T stg NTE2367 .......................................................... 55 to +160C NTE2368 .......................................................... 55 to +150C Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I CBO NTE2367 I = 0 V = 40V 0.1 A E CB NTE2368 V = 50V 0.1 A CB NTE2367 I I = 0 V = 40V 0.5 A CEO B CE NTE2368 V = 50V 0.5 A CB Emitter Cutoff Current I EBO NTE2367 V = 5V, I = 0 170 250 330 A EB C NTE2368 V = 10V, I = 0 0.82 1.52 mA EB C DC Current Gain h V = 5V, I = 10mA 30 FE CE C Current GainBandwidth Product f T NTE2367 V = 10V, I = 5mA 250 MHz CE C NTE2368 200 MHz Rev. 219Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Current GainBandwidth Product f T NTE2367 V = 10V, I = 5mA 250 MHz CE C NTE2368 200 MHz Output Capacitance C V = 10V, f = 1MHz 3.0 pF ob CB CollectorEmitter Saturation Voltage V I = 5mA, I = 0.25mA 0.1 0.3 V CE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 50 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100A, R = 50 V (BR)CEO C BE Input OFF Voltage V V = 5V, I = 100A 1.0 1.5 V I(off) CE C Input ON Voltage V V = 200mV, I = 5mA 1.1 2.0 V I(on) CE C Input Resistance R 3.29 4.7 6.11 k 1 Input Resistance Ratio R /R 0.9 1.0 1.1 1 2 Collector Collector Schematic Diagram (Output) (Output) R R 1 1 Base Base (Input) (Input) R R 2 2 Emitter Emitter (GND) (GND) NPN PNP .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max